Browsing by Author "Luo, X."

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    3D characterisation of tool wear whilst diamond turning silicon
    (Elsevier Science B.V., Amsterdam., 2006-07-24T00:00:00Z) Durazo-Cardenas, Isidro; Shore, Paul; Luo, X.; Jacklin, T.; Impey, Susan A.; Cox, A.
    Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge degradation and the effect on the achieved surface have prevented significant exploitation. With the aim of developing a process model to optimise the diamond turning of silicon optics, a series of experimental trials were devised using two ultra-precision diamond turning machines. Single crystal silicon specimens (1 1 1) were repeatedly machined using diamond tools of the same specification until the onset of surface brittle fracture. Two cutting fluids were tested. The cutting forces were monitored and the wear morphology of the tool edge was studied by scanning electron microscopy (SEM). The most significant result showed the performance of one particular tool was consistently superior when compared with other diamond tools of the same specification. This remarkable tool performance resulted in doubling the cutting distance exhibited by the other diamond tools. Another significant result was associated with coolant type. In all cases, tool life was prolonged by as much as 300% by using a specific fluid type. Further testing led to the development of a novel method for assessing the progression of diamond tool wear. In this technique, the diamond tools gradual recession profile is measured by performing a series of plunging cuts. Tool shape changes used in conjunction with flank wear SEM measurements enable the calculation of the volumetric tool wear rate.
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    Influence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigation
    (Elsevier, 2016-08-31) Chavoshi, Saeed Zare; Goel, Saurav; Luo, X.
    Using molecular dynamics (MD) simulation, this paper investigates anisotropic cutting behaviour of single crystal silicon in vacuum under a wide range of substrate temperatures (300 K, 500 K, 750 K, 850 K, 1173 K and 1500 K). Specific cutting energy, force ratio, stress in the cutting zone and cutting temperature were the indicators used to quantify the differences in the cutting behaviour of silicon. A key observation was that the specific cutting energy required to cut the (1 1 1) surface of silicon and the von Mises stress to yield the silicon reduces by 25% and 32%, respectively, at 1173 K compared to what is required at 300 K. The room temperature cutting anisotropy in the von Mises stress and the room temperature cutting anisotropy in the specific cutting energy (work done by the tool in removing unit volume of material) were obtained as 12% and 16%, respectively. It was observed that this changes to 20% and 40%, respectively, when cutting was performed at 1500 K, signifying a very strong correlation between the anisotropy observed during cutting and the machining temperature. Furthermore, using the atomic strain criterion, the width of primary shear zone was found to vary with the orientation of workpiece surface and temperature i.e. it remains narrower while cutting the (1 1 1) surface of silicon or at higher machining temperatures. A major anecdote of the study based on the potential function employed in the study is that, irrespective of the cutting plane or the cutting temperature, the state of the cutting edge of the diamond tool did not show direct diamond to graphitic phase transformation.