Davis, J. A.Loeb, H. W.2015-08-272015-08-271965-11http://dspace.lib.cranfield.ac.uk/handle/1826/9356A general method for the solution of the nonlinear Shockley-Poisson differential equation which governs the potential distribution in non-degenerate semiconductor systems is described which can be applied to the evaluation of depletion layer widths, carrier densities and capacitance bias relationships of p-n junction structures. The method is based upon the use of a particular type of resistance network analogue and results obtained for several one and two dimensional configurations are discussed.enC.V.D. annual report: November 1965 research project RU27-1 :an analogue method for the determination of potential distributions in semiconductor systemsReport