Nel, BarryPerinpanayagam, Suresh2017-03-222017-03-222017-03-02Nel BJ, Perinpanayagam S, A Brief Overview of SiC MOSFET Failure Modes and Design Reliability, Procedia CIRP, Volume 29, 2017, Pages 280 - 285.2212-8271http://dx.doi.org/10.1016/j.procir.2016.09.025https://dspace.lib.cranfield.ac.uk/handle/1826/11634This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) into a design. There is an increasing trend regarding the use of these devices in various applications due to their improved performance over conventional Silicon (Si) based devices. The failure modes of SiC MOSFETs are discussed, as well as the indicators which signal device degradation and failure. The impact of packing design on reliability and performance is also discussed along with a number of application related concepts which bring to light some of the issues regarding the use of SiC MOSFETs as a relatively young technology.enAttribution-Non-Commercial-No Derivs 4.0 Unported (CC BY-NC-ND 4.0). You are free to: Share — copy and redistribute the material in any medium or format. The licensor cannot revoke these freedoms as long as you follow the license terms. Under the following terms: Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. Information: Non-Commercial — You may not use the material for commercial purposes. No Derivatives — If you remix, transform, or build upon the material, you may not distribute the modified material. No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.SiCMOSFETOverviewReliabilityFailureApplicationArticle