Peng, BiaolinZhang, QiLi, XingSun, TieyuFan, HuiqingKe, ShanmingYe, MaoWang, YuLu, WeiNiu, HanbenScott, James F.Zeng, XierongHuang, Haitao2017-05-252017-05-252015-04-11Peng B, Zhang Q, Li X et. al. Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics, Advanced Electronic Materials, 2015, Volume1, Issue 5, article number 15000522199-160Xhttps://dspace.lib.cranfield.ac.uk/handle/1826/11931http://dx.doi.org/http://dx.doi.org/10.1002/aelm.201500052Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here we demonstrate that a giant electric energy density (154 J×cm-3, 3 times the highest value of lead-based systems and 5 times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion and the coexistence of the FE/AFE phases near the morphotropic phase boundary (MPB). The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.enAttribution-NonCommercial 4.0 Internationalhttp://creativecommons.org/licenses/by-nc/4.0/energy storagerelaxorantiferroelectricPLDMPBArticle