Bansal, A.Hergert, R.Dou, G.Wright, Robert V.Bhattacharyya, DebabrataKirby, Paul B.Yeatman, E. M.Holmes, A. S.2011-04-212011-04-212011-02-01Bansal, A., Hergert, R., Dou, G., Wright, R.V., Bhattacharyya, D., Kirby, P.B., Yeatman, E.M. and Holmes, A.S., Laser transfer of sol-gel ferroelectric thin films using an ITO release layer, Microelectronic Engineering, 2011, Volume 88, Issue 2, Pages 145-149.0167-9317http://dx.doi.org/10.1016/j.mee.2010.09.021http://dspace.lib.cranfield.ac.uk/handle/1826/5231A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate. The thin film ferroelectric material is deposited on a fused silica growth substrate with a sacrificial release layer of ITO (indium tin oxide). Regions of the film that are to be transferred are then selectively metallised, and bonded to the target substrate. Separation from the growth substrate is achieved by laser ablation of the ITO release layer by a single pulse from a KrF excimer laser, with the laser light being incident through the growth substrate. The residual ITO on the transferred ferroelectric layer is electrically conducting, and may be suitable for incorporation into the final device, depending on the application. The new process has been demonstrated for 500 nm-thick layers of sol-gel PZT which were thermosonically bonded to a silicon target substrate prior to laser release. The transferred films show ferroelectric behaviour and have a slightly reduced permittivity compared to the as-depositen-UKNOTICE: this is the author’s version of a work that was accepted for publication in Microelectronic Engineering. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, VOL 88, ISSUE 2, (2011) DOI:10.1016/j.mee.2010.09.021Article