Browsing by Author "Fan, Huiqing"

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    Dielectric and tunability properties of the Pb(Mg1/3Nb2/3)1-xZrxO3 ceramics
    (Elsevier Science B.V., Amsterdam., 2013-02-05T00:00:00Z) Peng, Biaolin; Fan, Huiqing; Li, Q; Zhang, Qi
    Pure perovskite Pb(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2O3 ceramics was prepared via a modified “columbite-type” method. The 1:1 B-site ordered structure of Pb(Sc1/2Nb1/2)O3 was detected by XRD and TEM. The dielectric relaxor behavior was described by a Lorentz relation. The dielectric tunability properties were investigated at 300K and 10 kHz. The results show that the ceramics possesses high dielectric tunability (~ 75% at 30 kV/cm), low dielectric loss (~ 0.003) and high figure of merit (~ 250), indicating that it is a promising tunable material. The high dielectric nonlinear behavior was illustrated by employing the Landau-Ginsberg-Devonshire thermodynamic theory and a multipolarization mechanism model. The results indicate that the high non-linearity is related to the contributions of the “extrinsic” polarizations such as the polar nanoregions and nanometer domain wall motions, etc., in addition to the contribution of the “intrinsic” lattice phonon polarization.
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    Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics
    (Wiley, 2015-04-11) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Scott, James F.; Zeng, Xierong; Huang, Haitao
    Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here we demonstrate that a giant electric energy density (154 J×cm-3, 3 times the highest value of lead-based systems and 5 times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion and the coexistence of the FE/AFE phases near the morphotropic phase boundary (MPB). The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
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    A giant electrocaloric effect in nanoscale antiferroelectric and ferroelectric phases coexisting in a relaxor Pb0.8Ba0.2ZrO3 thin film at room temperature
    (John Wiley & Sons, Ltd, 2013-06-20T00:00:00Z) Peng, Biaolin; Fan, Huiqing; Zhang, Qi
    Recently large electrocaloric effects (ΔT = 12 K and ΔS = 8 JK-1kg-1 at 776 kV/cm) in antiferroelectric sol-gel PbZr0.95Ti0.05O3 thin film and (ΔT = 12.6 K and ΔS = 60 JK-1kg-1 at 2090 kV/cm) in ferroelectric polymer P(VDF-TrFE)55/45 thin film have been observed near their ferroelectric Curie temperatures 495 K and 353 K, respectively. Here the authors demonstrate a giant EC effect (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kV/cm) in the nano-scaled antiferroelectric and ferroelectric phases coexisted relaxor Pb0.8Ba0.2ZrO3 (PBZ) thin film at the room temperature 290 K rather than at its Curie temperature 408 K. Field-induced antiferroelectric to ferroelectric phase transition played a crucial role in the dramatic EC property of PBZ thin film.. The giant EC effect of PBZ thin film makes it an attractive material for applications in cooling systems near room temperature.
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    High dielectric non-linear properties of the Pb(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2O3 ceramics
    (Elsevier Science B.V., Amsterdam., 2012-08-01T00:00:00Z) Peng, Biaolin; Fan, Huiqing; Li, Qiang; Zhang, Qi
    Pure perovskite Pb(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2O3 ceramics was prepared via a modified "columbite-type" method. The 1:1 B-site ordered structure of Pb(Sc1/2Nb1/2)O3 was detected by XRD and TEM. The dielectric relaxor behavior was described by a Lorentz relation. The dielectric tunability properties were investigated at 300K and 10 kHz. The results show that the ceramics possesses high dielectric tunability (~ 75% at 30 kV/cm), low dielectric loss (~ 0.003) and high figure of merit (~ 250), indicating that it is a promising tunable material. The high dielectric nonlinear behavior was illustrated by employing the Landau-Ginsberg-Devonshire thermodynamic theory and a multipolarization mechanism model. The results indicate that the high non-linearity is related to the contributions of the "extrinsic" polarizations such as the polar nanoregions and nanometer domain wall motions, etc., in addition to the contribution of the "intrinsic" lattice phonon polarization.
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    High dielectric tunability, electrostriction strain and electrocaloric strength at a tricritical point of tetragonal, rhombohedral and pseudocubic phases
    (Elsevier, 2015-06-16) Peng, Biaolin; Zhang, Qi; Li, Tieyu; Ke, Shanming; Ye, Mao; Wang, Yu; Niu, Hanben; Zeng, Xierong; Fan, Huiqing; Huang, Haitao
    A relaxor ferroelectric Pb(Ni1/3Nb2/3)0.5Zr0.15Ti0.35O3 (PNNZT) ceramic was reported, designed upon an idea that the composition is selected to near a tricritical point of tetragonal, rhombohedral and pseudocubic phases. High dielectric tunability of 67%, simultaneously with high electrostriction strain of 0.319% and high electrocaloric strength (ΔT/ΔE) of 32.5 mK cm/kV are achieved, which make it a promising multifunctional material for applications in dielectric tunable, precisely controlled and electric refrigeration devices. This is endowed by the low energy barrier among the transitions of phases and strong relaxor ferroelectric activities around the tricritical point. This work provides a guide for the design of multifunctional ferroelectric materials and can promote the development of other multifunctional ferroic materials.
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    High tunability in (111)-oriented relaxor Pb0.8Ba0.2ZrO3 thin film with antiferroelectric and ferroelectric two-phase coexistence
    (Wiley, 2013-03-22) Peng, Biaolin; Fan, Huiqing; Zhang, Qi
    Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability (η) and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E = 560 kV/cm and ~236, respectively. High-temperature stability (η > 75% and FOM > 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current < 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.
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    Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
    (American Chemical Society, 2015-05-21) Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao
    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).
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    Preparation and field-induced electrical properties of perovskite relaxor ferroelectrics
    (Korean Institute of Electrical and Electronic Material Engineers (KIEEME), 2015-04-03) Fan, Huiqing; Peng, Biaolin; Zhang, Qi
    (111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (AT = 45.3 K and AS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.