CERES
CERES TEST Only!
  • Communities & Collections
  • Browse CERES
  • Library Staff Log In
    New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Ristic, Radoljub I."

Now showing 1 - 1 of 1
Results Per Page
Sort Options
  • Loading...
    Thumbnail Image
    ItemOpen Access
    Seeded crystal growth of the acentric organic non-linear optical material Methyl-p-Hydroxybenzoate (MHB) from the vapour phase
    (American Chemical Society, 2023-06-06) Hou, Wenbo B.; Ristic, Radoljub I.; Sherwood, John N.; Vrcelj, Ranko
    Using in-situ differential interference contrast microscopy (DICM), growth morphology, structure, and step velocities of the vicinal hillocks on {110} and {111̅} faces of MHB crystal seeds growing from the vapour phase have been investigated over a supersaturation (σ) range of (0.2 < σ < 0.6). Under these conditions of supersaturation, a dislocation induced growth mechanism was identified. Ex-situ atomic force microscopy (AFM) shows that some dislocation induced hillocks exhibit hollow cores. The general observations of the {110} and {111̅} surfaces reveal that these faces follow a classical mode of layer growth, continuous generation of new layers by dislocation outcrops, which subsequently bunch and spread to cover the entire facets. A tangential step velocity of the slow and fast sides of {110} and {111̅} growth hillocks show a linear dependence with supersaturation in the region of (0.2 < σ < 0.4). Analysis of this dependence leads to the respective growth parameters for the identified growth mechanism: the activation energies for the slow and fast step motion of a growth hillock (EaS and EaF) and the corresponding kinetic coefficients (βaS and βaF), for both faces. The growth from physical vapour transport (PVT) shows that for the title material, as with a number of other polar materials, solvent poisoning is not the cause of the highly differential growth rates and is an intrinsic feature of the crystal. The results suggest that in terms of the production of large single crystals of high perfection by PVT, the supersaturation range for dislocation growth should be between 0.2 and 0.4. These findings provide a foundation for the rational design of large MHB crystals that may find applications utilizing their high optoelectronic potential.

Quick Links

  • About our Libraries
  • Cranfield Research Support
  • Cranfield University

Useful Links

  • Accessibility Statement
  • CERES Takedown Policy

Contacts-TwitterFacebookInstagramBlogs

Cranfield Campus
Cranfield, MK43 0AL
United Kingdom
T: +44 (0) 1234 750111
  • Cranfield University at Shrivenham
  • Shrivenham, SN6 8LA
  • United Kingdom
  • Email us: researchsupport@cranfield.ac.uk for REF Compliance or Open Access queries

Cranfield University copyright © 2002-2025
Cookie settings | Privacy policy | End User Agreement | Send Feedback