Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

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dc.contributor.authorMitrovic, I. Z.
dc.contributor.authorWeerakkody, A. D.
dc.contributor.authorSedghi, N.
dc.contributor.authorRalph, J. F.
dc.contributor.authorHall, S
dc.contributor.authorDhanak, V. R.
dc.contributor.authorLuo, Z
dc.contributor.authorBeeby, S
dc.date.accessioned2018-02-20T17:02:46Z
dc.date.available2018-02-20T17:02:46Z
dc.date.issued2018-01-05
dc.description.abstractWe present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.en_UK
dc.identifier.citationMitrovic IZ, Weerakkody AD, Sedghi N, Ralph JF, Hall S, Dhanak VR, Luo Z, Beeby S, Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures, Applied Physics Letters, Vol. 112, Issue 1, January 2018, Article number 012902en_UK
dc.identifier.cris19538862
dc.identifier.issn0003-6951
dc.identifier.urihttp://dx.doi.org/10.1063/1.4999258
dc.identifier.urihttp://dspace.lib.cranfield.ac.uk/handle/1826/13017
dc.language.isoenen_UK
dc.publisherAmerican Institute of Physics (AIP)en_UK
dc.rightsAttribution-NonCommercial 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/*
dc.subjectResonant tunnelingen_UK
dc.subjectTunnelingen_UK
dc.subjectWork functionsen_UK
dc.subjectQuantum wellsen_UK
dc.subjectElectronic devicesen_UK
dc.titleControlled modification of resonant tunneling in metal-insulator-insulator-metal structuresen_UK
dc.typeArticleen_UK

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