The PN junction as a variable reactance device for F. M. production
Date published
1957-11
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College of Aeronautics
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Abstract
A completely transistorized modulator has been developed for the production of frequency modulation of a 10Mc Is carrier. A frequency deviation of 100kc s is obtained by a change in the modulating signal of 0.15V and very good frequency modulation results with very little amplitude modulation.