Parameter space of atomic layer deposition of ultra-thin oxides on graphene

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dc.contributor.authorAria, Adrianus Indrat
dc.contributor.authorNakanishi, Kenichi
dc.contributor.authorXiao, Long
dc.contributor.authorBraeuninger-Weimer, Philipp
dc.contributor.authorSagade, Abhay A.
dc.contributor.authorAlexander-Webber, Jack
dc.contributor.authorHofmann, Stephan
dc.date.accessioned2017-02-20T16:44:23Z
dc.date.available2017-02-20T16:44:23Z
dc.date.issued2016-10-10
dc.description.abstractAtomic layer deposition (ALD) of ultrathin aluminum oxide (AlOx) films was systematically studied on supported chemical vapor deposition (CVD) graphene. We show that by extending the precursor residence time, using either a multiple-pulse sequence or a soaking period, ultrathin continuous AlOx films can be achieved directly on graphene using standard H2O and trimethylaluminum (TMA) precursors even at a high deposition temperature of 200 °C, without the use of surfactants or other additional graphene surface modifications. To obtain conformal nucleation, a precursor residence time of >2s is needed, which is not prohibitively long but sufficient to account for the slow adsorption kinetics of the graphene surface. In contrast, a shorter residence time results in heterogeneous nucleation that is preferential to defect/selective sites on the graphene. These findings demonstrate that careful control of the ALD parameter space is imperative in governing the nucleation behavior of AlOx on CVD graphene. We consider our results to have model system character for rational two-dimensional (2D)/non-2D material process integration, relevant also to the interfacing and device integration of the many other emerging 2D materials.en_UK
dc.identifier.citationAdrianus I. Aria, Kenichi Nakanishi, Long Xiao, et al., Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene, ACS Applied Materials & Interfaces, 2016, Vol. 8, Number 44, pp. 30564–30575en_UK
dc.identifier.issn1944-8244
dc.identifier.urihttp://pubs.acs.org/doi/abs/10.1021/acsami.6b09596
dc.identifier.urihttps://dspace.lib.cranfield.ac.uk/handle/1826/11467
dc.language.isoenen_UK
dc.publisherAmerican Chemical Society en_UK
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectGrapheneen_UK
dc.subjectAtomic layer depositionen_UK
dc.subjectAluminum oxideen_UK
dc.subjectUltrathin filmsen_UK
dc.subjectConformal depositionen_UK
dc.titleParameter space of atomic layer deposition of ultra-thin oxides on grapheneen_UK
dc.typeArticleen_UK

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